| PART |
Description |
Maker |
| PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127 |
From old datasheet system
8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN
N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUZ901X4S MNT-LC32030-C4 |
32 A, 200 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SOT-227, 4 PIN
32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET SMARTPACK-10
|
TT electronics Semelab, Ltd.
|
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| AP9120GH-HF AP9120GJ-HF AP9120GH-HF-14 AP9120GJ-HF |
8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower On-resistance
Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
|
| STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| RJK2006DPE-TL-E RJK2006DPF RJK2006DPJ |
Silicon N Channel MOS FET High Speed Power Switching
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
|
Renesas Electronics Corporation
Glenair, Inc.
|
| IRFS640A |
N-Channel Power MOSFET00V.18Ω.8AN沟道功率MOS场效应管（漏源电00V，导通电.18Ω，漏电流9.8 9.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| BSP121 |
N-channel enhancement mode vertical D-MOS transistor 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
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